GaN is a very stable, hard, high melting point material with a melting point of about 1700 ° C. GaN has a high degree of ionization and is the highest (0.5 or 0.43) among III-V compounds. At atmospheric pressure, GaN crystals are generally hexagonal wurtzite structures. It has 4 atoms in a cell, and its atomic volume is about half that of GaAs. It is a new semiconductor material for the development of microelectronic devices and optoelectronic devices. Together with semiconductor materials such as SiC and diamond, it is known as the third generation after the first generation of Ge, Si semiconductor materials, second generation GaAs, InP compound semiconductor materials. Generation of semiconductor materials. Because of its high hardness, it is a good coating protection material. Let us understand the chemical, electrical and optical properties of GaN.
1. Chemical Properties of GaN At room temperature, GaN is insoluble in water, acid and alkali, and dissolves at a very slow rate in a hot alkaline solution. NaOH, H2SO4, and H3PO4 can corrode poor quality GaN faster, and can be used for defect detection of these low-quality GaN crystals. GaN exhibits unstable characteristics at high temperatures under HCL or H2 gas, and is most stable under N2 gas.
2. Electrical properties of GaN
The electrical properties of GaN are the main factors affecting the device. Unintentionally doped GaN is n-type in each case, and the best sample has an electron concentration of about 4 x 1016/cm3. The P-type samples prepared under normal conditions are all highly compensated. According to the researchers, the highest mobility data of GaN is μn=600cm2/v•s and μn=1500cm2/v•s at room temperature and liquid nitrogen temperature respectively, and the corresponding carrier concentration is n=4×1016/cm3 and n = 8 × 10 15 /cm 3 . The electron concentration values ​​of the MOCVD deposited GaN layer reported in recent years are 4×10 16 /cm 3 and <1016/cm 3 ; the results of plasma-started MBE are 8×103/cm 3 and <1017/cm 3 . The undoped carrier concentration can be controlled in the range of 1014 to 1020/cm3. In addition, the doping concentration can be controlled in the range of 1011 to 1020/cm3 by the P-type doping process and the low energy electron beam irradiation or thermal annealing treatment of Mg.
3. Optical Properties of GaN The characteristics of GaN that people are concerned with are aimed at its application in blue and violet light emitting devices. GaN transistors are direct bandgap semiconductor materials with a wide bandgap (3.39 eV) at room temperature. It has important applications in optoelectronic devices such as blue, ultraviolet, and violet light emitting diodes and laser diodes. As a representative of the third-generation semiconductor materials, gallium nitride (GaN)-based materials can be made into high-efficiency blue and green light-emitting diodes and laser diodes LD (also known as lasers), and can be extended to white light, which will replace the lighting that humans have used today. system. Gallium nitride (GaN) based materials have laid the foundation for solving white LEDs, and GaN blue LED related materials and devices are widely used in full-color large-screen displays, high-brightness LED traffic signals and pointer lights, with gallium nitride as The basic high-brightness semiconductor LED has the advantages of small size, long life, low power consumption, and the like, and is developing toward high brightness, full color, and large size.
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