During the 4th China International Semiconductor Lighting Forum (CHINA SSL) hosted by the National Semiconductor Lighting Engineering R&D and Industry Alliance (CSA), after 140 papers, analysis of 54 speakers of the forum, and selection of 24 guests at home and abroad Key interviews (divided into four groups of interviews, interviews and outlines before the meeting), on-site questionnaires and interactive seminars of four chapters (especially the extension/chip branch, in the interactive discussion session of the conference, a questionnaire was specially designed. Through the interactive discussion between the 7 guests on the stage and the 45 present participants, the delegates boldly made predictions on the future development of the technology, as well as the research, induction and analysis of Chinese and foreign enterprise cooperation and competition dialogue, etc. The latest developments and trends in semiconductor lighting technology and industry development are summarized as follows:
(1) Technology update and development roadmap
1. The existing technical route (sapphire substrate) is unlikely to be replaced in the near future (3-5 years). According to this route, it is expected to achieve 130-150lm/W target in 2010, existing epitaxial materials and chips. Technology such as technology and technology will not have new breakthroughs in 3-5 years. Improving the lumens by simply improving the substrate material is not the biggest issue in the development of LEDs at this stage. The substrate stripping technique of sapphire and its associated vertical structure in the substrate material will still dominate for a long time.
2. At present, the biggest technical problem of LED is two high and low, that is, improving internal quantum efficiency and light extraction efficiency, reducing light decay (increasing life) and reducing cost. The final power efficiency of the LED is the product of electrical injection efficiency, internal quantum efficiency, light extraction efficiency, packaging efficiency, light conversion efficiency, and Stokes efficiency throughout the production process. The two indicators of internal quantum efficiency and light extraction efficiency need to be greatly improved. Light-effect Droop (attenuation of the photoelectric efficiency of LEDs under high current conditions) is a relatively large problem. Cost is the biggest obstacle to replacing traditional lighting with LEDs. In addition, the price of LEDs is not as high as that of traditional lamps. Although it can save the cost of replacement and maintenance for later use, the initial cost is often directly affected by the purchase budget. Localization of major equipment and raw materials is one of the important and effective ways to reduce costs. For example, in the cost of producing a 1W high-power LED, the cost of the chip accounts for 57%-87% of the total device (the raw material for epitaxy accounts for 37% of the chip cost, and the depreciation and power of MOCVD equipment accounts for 13% of the chip cost).
3, the current technology to solve the light efficiency preferred vertical structure and photonic crystal (3-5 years). Thin-film LLO-LEDs and low-cost Si substrate thin film growth technologies will continue to maintain their advantages in the short term. Laser-stripped large-size vertical structure LEDs are currently the best solution for achieving high-brightness, power-type white LEDs. Compared with the traditional process, not only the light extraction efficiency is high, the forward pressure drop filial field radiation is good, and the light extraction efficiency does not decrease significantly with the increase of the die size, which is the first glare of increasing the internal quantum efficiency in the case of large flow injection. Under the circumstance, the photoelectric conversion efficiency of the vertical structure LED is attenuated more slowly than the original process. Photonic crystals are the only way to improve the efficiency of external quantum.
4. Future technology trends are non-polar surface epitaxy (5-8 years) and GaN substrate epitaxy (8-10 years). The non-polar surface growth technology can effectively reduce the built-in polarization field, and provides a new choice for improving the internal quantum efficiency. It is expected to break through the current obstacle of the integration of the three primary color LEDs - the high power efficiency of the green LED. This makes it possible to achieve warm tones as well as white LED illumination with adjustable tones. GaN substrate growth technology can effectively reduce defects and control non-uniformity, which is an effective method to fundamentally improve internal quantum efficiency. Experts believe that the application of GaN substrate technology can effectively suppress the decay of photoelectric efficiency appearing under high current conditions. It is expected that it will take 8-10 years to make a breakthrough.
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