Atmel announced the provision of new LIN series components for automotive switch scanning applications and in-vehicle ambient lighting control. The new components ATA66415 and ATA664251 contain other competing solutions that can only be achieved by using multiple components in combination Extensive on-chip functions.
The new LIN components are available in ultra-small packages with dimensions of only 5mm and 5mm and 7mm and 7mm, which greatly reduces the footprint of the terminal application and reduces the overall cost and development time of automotive ambient lighting applications.
Switch scanning applications for car doors, sunroof modules and central stacking can benefit from the extremely low sleep mode power consumption of the components. The current source is controlled by three independent pulse width modulation (PWM) signals, suitable for controlling RGB LEDs Environmental lighting solutions.
The ATA664151 and ATA664251 LIN components include an eight-channel high-voltage switch interface, current source, and analog voltage multiplexer to scan current switches up to 20mA in automotive applications. The integrated state change detector can provide switch scanning applications with extremely low current consumption. The current source is controlled by three independent PWM signals, allowing the device to be used as an ambient lighting circuit to control RGB LEDs. LIN 2.2 and SAEJ2602-2 compatible transceivers are based on Atmel's third-generation LIN transceiver IP, have the best EMC anti-jamming capability of the same level, and include a low-drop 5V voltage regulator with 80mA current capability And an adjustable window watchdog monitor.
ATA664251 is a system-in-package solution using ATA664151 chip and Atmel AVR® 8-bit ATtiny167 microcontroller (MCU). The low-power RISC-based ATTIny167 MCU combines 16KB flash memory, 512B EEPROM, 512-Byte SRAM, 16 general-purpose I / O lines, 32 general-purpose working registers, an 8-bit and 16-bit timer / counter unit with compare mode, an 11-channel 10-bit analog-to-digital converter and three software-selectable energy-saving mode.
This combination can develop simple, inexpensive, yet powerful nodes suitable for ambient lighting and switch scanning applications.
Atmel now provides samples of ATA664151 and ATA664251 LIN ICs in small QFN32 (5 × 5mm, ATA664151) and QFN48 (7 × 7mm, ATA664251) packages, ordering 10,000 pieces in bulk, starting at $ 0.99 each ( ATA664151) and USD 1.79 (ATA664251). To support engineers and speed up IC development work, Atmel provides complete evaluation kits (ATAK42001-V1 kit for ATA664151 and ATAK43001-V1 kit for ATA664251).
Metal oxide semiconductor field effect (MOS) transistors can be divided into N-channel and P-channel. P-channel silicon MOS field-effect transistors have two P+ regions on the N-type silicon substrate, which are called source and The drain is not conductive between the two poles, and when a sufficient positive voltage (gate ground) is applied to the source, the surface of the N-type silicon under the gate exhibits a P-type inversion layer, which becomes a channel connecting the source and the drain. . Changing the gate voltage changes the density of the holes in the channel, thereby changing the resistance of the channel. Such a MOS Field Effect Transistor is called a P-channel enhancement type field effect transistor. If the surface of the N-type silicon substrate is free of gate voltage, the P-type inversion layer channel already exists, and the appropriate bias voltage can increase or decrease the resistance of the channel. Such a MOS field effect transistor is referred to as a P-channel depletion field effect transistor. They are collectively referred to as PMOS transistors.
P Channel Mosfet,P Channel Power Mosfet,Field Effect Transistor,Field Effect Transistor Symbol
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